G12 Series Photoelectric Sensor with High Precision Infrared Photoelectric Proximity Switch Sensor

• Customization: Available
• Type: Diffuse Reflection Type Photoelectric Sensor
• Output Signal Type: Switching Type
• Model NO.: G12-3C3NB
• Production Process: Normal Wirewound
• Material: Metal
• Feature: SemiConductor
• IP Rating: IP67
• Certification: CE
• Customized: Customized
• Mounting Type: Cable
• Current Consumption: Below 10mA
• Control Output: Below 200mA
• Detection Distance: 3mm
• Head Type: Flush
• Transport Package: Exporting Standard
• Specification: Single package size: 14X12.5X6 cm
• Trademark: annele
• Origin: Wenzhou
• Package Size: 15.00cm * 11.00cm * 8.00cm
• Package Gross Weight: 0.300kg

Product Description

photoelectric sensor G12-3C3NB infrared photoelectric proximity switch sensor

  ANNELE photoelectric sensors G12 series is a high-performance sensor products, diffuse type's detection distance is 7cm, retroreflictive's detection distance is 1m, trough beam's detection distance is 3m, can meet the needs of a variety of industrial automation and detection applications, widely used in industrial automation and machinery and equipment field.
      

Product Parameters

 

Structural category				Photoelectric switch
Outward appearance code				G12
Dimension
Diffuse type	Detection distance			0-8cm
	DC	NPN	NO	3A08NA
	10		NC	3A08NB
	~		NO+NC
	30	PNP	NO	3A08PA
	V		NC	3A08PB
			NO+NC
	90~	SRC Control label silicon	NO
	250		NC
	V AC	Relay output
Retroreflictive	Detection distance			1m
		NPN	NO	3B1NA
	DC		NC	3B1NB
	10		NO+NC
	~	PNP	NO	3B1PA
	30		NC	3B1PB
	V		NO+NC
	90~	SRC Control label silicon	NO
	250		NC
	V AC	Relay output
Trough beam	Detection distance			3m
		NPN	NO	3C3NA
	DC		NC	3C3NB
	10~		NO+NC
	30	PNP	NO	3C3PA
	V		NC	3C3PB
			NO+NC
	90~	SRC Control label silicon	NO
	250		NC
	V AC	Relay output
DC/SCR Control output				DC:200mA
DC/AC Consumption current				DC<15mA
DC/AC Response time				DC<2ms
Directional angle				3°-10°
Detected object				transparent of opaque body
Working environment temperature				-25ºC~55ºC
Intensity of illumination of working environment
Shell material				Metal
Protection grade				IEC standard IP54

 

Characteristic:

Model composition and definition of infrared ray photoelectric switch
G  18  3  A  10  N  A
1   2   3  4   5   6  7  8
No.	Composition	Code and definition
1	Basic form	G: infrared ray photoelectric switch
2	Outward appearance code	18,50,76
3	Working voltage	2.90-250VAC 3:10-30VDC 4:12-240VDC/24-240VAC 5:Special voltage
4	Detection way	A: diffused reflection type(scattered reflection type)
		B: feedbace reflection type mirror(mirror reflection type)
		C: penetration type(correlation type)
		D: marking detection type
		G: optical fiber type
5	Detection distance	05: 5cm 10: 10cm 30: 30cm 101: 10m
6	Output form	N: NPN transistor output     P:PNP transistor output     J: Relay contact output         L:AC two-wire output     S: with two outputs: NPN and PNP
7	Output state	A: Normally open(light entering ON)      B: Normally close(light sheltering ON)
		C: Normally open+ normally close
8	Subsidiary	T1: front delay   T2: rear delay   Y:oil proof T: with aviation connector   I: special requirement

 

G series proximity photoelectric switch sensor

Structural category				Photoelectric switch
Outward appearance code				G12	G15	G16
Outward appearance illustration
Diffuse type	Detection distance			7cm	10cm	10cm
	10- 30 VDC	NPN	NO	G12 -3A 07NA	G15 -3A 10NA	G16 -3A 10NA
			NC	G12 -3A 07NB	G15 -3A 10NB	G16 -3A 10NB
			NO+NC	-	-	-
		PNP	NO	G12 -3A 07PA -	G15 -3A 10PA	G16 -3A 10PA
			NC	G12 -3A 07PB -	G15 -3A 10PB	G16 -3A 10PB
			NO+NC	-	-	-
	90~250 VAC	SCR Controllable Silicon	NO	-	-	-
			NC	-	-	-
		Relay output		-	-	-
Retrore-flictive	Detection distance			1m	1m	1m
	10- 30 VDC	NPN	NO	G12-3B1NA	G15-3B1NA	G16-3B1NA
			NC	G12-3B1NB	G15-3B1NB	G16-3B1NB
			NO+NC	-	-	-
		PNP	NO	G12-3B1PA	G15-3B1PA	G16-3B1PA
			NC	G12-3B1PB	G15-3B1PB	G16-3B1PB
			NO+NC	-		-
	90~250 VAC	SCR Controllable Silicon	NO	-		-
			NC	-		-
		Relay output		-		-
Trough beam	Detection distance			3m	3m	-
	10- 30 VDC	NPN	NO	G12 -3C 3NA	G15 -3C 3NA	-
			NC	G12 -3C 3NB	G15 -3C 3NB	-
			NO+NC	-	-	-
		PNP	NO	G12 -3C 3PA	G15 -3C 3PA	-
			NC	G12 -3C 3PB	G15 -3C 3PB	-
			NO+NC	-	-	-
	90~250 VAC	SCR Controllable Silicon	NO	-	-	-
			NC	-	-	-
		Relay output		-	-	-
DC/SCR/Control output				DC:200mA		DC:200mA,AC:300mA
DC/AC Consumption current				DC<15mA		DC<15mA,AC:<10mA
DC/AC Response time				DC<2ms		DC<2mS ,AC<20mS
Directional angle				3°-10°
Directed object				Transparent or opaque body
Working environment temperature				-25ºC ~ + 55ºC
Intensity of illumination of working environment				Sunlight under 10000LX incandescent lamp under 3000LX
Shell material				Metal	Plastic, Metal	Plastic
Protection grade				IP67	IP67	IP67

 

 

 

 

WORKING PRINCIPLE PHOTOELECTRIC SWITCH

The working principle of the photoelectric switch is that when the beam emitted by the emitter is blocked or partly reflected by the object, the beam receiver whereby makes a judgment and reacts.The working principle of the photoelectric switch is that when the beam emitted by the emitter is blocked or partly reflected by the object, the beam receiver whereby makes a judgment and reacts.

Detailed Photos

 

 

Application