Zhejiang, China
Business Type:
Manufacturer/Factory, Trading Company
Registered Capital:
100000 RMB
Plant Area:
101~500 square meters
Management System Certification:
ISO 9001
Average Lead Time:
Peak season lead time: one month
Off season lead time: within 15 workday
Sample Available

Photoelectric Sensor Switch, Sensor, Inductive Sensor manufacturer / supplier in China, offering G50 Photo Electric Retroreflective Type Omron Photoelectric Switch, 700-M Series Multi-Circuit Monitoring System for Sfere700 Monitoring Module, 700-P Multi-Circuit Monitoring System Power Supply Module and so on.

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Supplier Homepage Products Sensor & Proximity Switch Photoelectric sensor G50 Photo Electric Retroreflective Type Omron Photoelectric Switch

G50 Photo Electric Retroreflective Type Omron Photoelectric Switch

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Min. Order: 1 Piece
Port: Ningbo, China
Production Capacity: 50000
Payment Terms: L/C, T/T, Western Union, Paypal, Money Gram
Type: Large range Ultrasonic Sensor
Output Signal Type: Analog Type
Production Process: Integration
Sensitivity: High
Probe Type: Dual Probe
Measuring Medium: Solid

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Basic Info

Model NO.: G50
Detection mode: Direct Reflection Type
IP Rating: IP67
Certification: CE
Customized: Non-Customized
Detect Distance: 50-800mm
Output Type: 1 Switch Output E5
Shell Material: Metal
Working Environment Temperature: -25c-75c
Trademark: ANN
Transport Package: 1 PC in One Small Bag
Origin: China
HS Code: 9033000000

Product Description

G50 Photoelectric sensor switch
Throuht-beam type

Through-beam bype photoelectric switch is designed that via the light beam between opposite-mounted transmitter and receiver, the object passing through these two devices will interrupt the light beam and start the receiver.

 

Diffuse type
Diffuse reflection type photoelectric switch integrates the transmitter and the reciver. Light reflected by the photoelectric switch is reflected back to the receiver by the detected object.

 

Retroreflective type
Retroreflective type photoelectric switch also integrates the transmitter and the receiver, Its difference from other models is that reflecotr is used to relfect light to the photoelectric switch. Though the object between the photoelectric switch and reflector can reflect the light, it is much less efficient than the reflector so as to cut down reflected light.

 

Convergence reflection type (condensation type)
The working principle of convergence reflection type photoswitch is similar to that of direct reflection type one, while its projector and light receiver focus on boject distance, only when the object presents to the focus can the photoswitch actuate.

 Model explanation of Photoelectric Sensor

G50 Photo Electric Retroreflective Type Omron Photoelectric Switch

1. G: Photoelectric sensor
2. Sub code No.(18, 50, 76.....)
3. Operating voltage(2: 90-250VAC ;3: 10-30VDC; 4: 12-240VDC/24-240VAC; 5: Special voltage)
4. Detection method( A: Diffuse type; B: Mirror reflex type; C: Through beam type)
5. Detection distance (05: 5cm ; 10: 10cm; 30: 30cm; 101: 10m)
6. Output method(N: NPN transistor output; P: PNP transistor output; J: Relay output; L: AC two-line output; S: NPN+PNP)
7. Output status(A: NO; B: NC; C: NO+NC)
8. Auxi function code(T1: Front delay; T2: Rear delay; Y: Oil proof; T: With connector; I: Special requirement)

 

Technical Parameters:

Model NO.Detection distanceWorking voltageOutputDetection way
FormState
G50 -3A 30NA30cm 50cmDC10-30VNPNNODiffuse type
G50 -3A 30NB30cm 50cmDC10-30VNPNNCDiffuse type
G50 -3A 30NC30cm 50cmDC10-30VNPNNO+NCDiffuse type
G50 -3A 30PA30cm 50cmDC10-30VPNPNODiffuse type
G50 -3A 30PB30cm 50cmDC10-30VPNPNCDiffuse type
G50 -3A 30PC30cm 50cmDC10-30VPNPNO+NCDiffuse type
G50-3B4NA4mDC10-30VNPNNORetroreflective
G50-3B4NB4mDC10-30VNPNNCRetroreflective
G50-3B4NC4mDC10-30VNPNNO+NCRetroreflective
G50-3B4PA4mDC10-30VPNPNORetroreflective
G50-3B4PB4mDC10-30VPNPNCRetroreflective
G50-3B4PC4mDC10-30VPNPNO+NCRetroreflective
G50 -3C 5NA5mDC10-30VNPNNOThrough beam
G50 -3C 5NB5mDC10-30VNPNNCThrough beam
G50 -3C 5NC5mDC10-30VNPNNO+NCThrough beam
G50 -3C 5PA5mDC10-30VPNPNOThrough beam
G50 -3C 5PB5mDC10-30VPNPNCThrough beam
G50 -3C 5PC5mDC10-30VPNPNO+NCThrough beam
G50 -2C 5LA5mAC90-250VSCR Control lable siliconNOThrough beam

 

 

 

 

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