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Yueqing Ann Electric Co., Ltd.

Photoelectric Sensor Switch, Sensor, Inductive Sensor manufacturer / supplier in China, offering G30 Retroreflective Omron Photo Electric Photoelectric Sensor Switch, IP66 Weatherproof 1 Gang 13 AMP Switched Socket, Ap Series Ap12 Weatherproof Switches, 1 Gang, 2way and so on.

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Supplier Homepage Product Sensor & Proximity Switch Photoelectric sensor G30 Retroreflective Omron Photo Electric Photoelectric Sensor Switch

G30 Retroreflective Omron Photo Electric Photoelectric Sensor Switch

FOB Price: Get Latest Price
Min. Order: 1 Piece
Production Capacity: 50000
Transport Package: 1 PC in One Small Bag
Payment Terms: L/C, T/T, Western Union, Paypal, Money Gram
Basic Info
  • Model NO.: G30
  • Output Signal Type: Analog Type
  • Sensitivity: High
  • Measuring Medium: Solid
  • IP Rating: IP67
  • Customized: Non-Customized
  • Output Type: 1 Switch Output E5
  • Working Environment Temperature: -25c-75c
  • Origin: China
  • Type: Large range Ultrasonic Sensor
  • Production Process: Integration
  • Probe Type: Dual Probe
  • Detection mode: Direct Reflection Type
  • Certification: CE
  • Detect Distance: 50-800mm
  • Shell Material: Metal
  • Trademark: ANN
  • HS Code: 9033000000
Product Description

 

G30 Photoelectric sensor switch

 Model explanation of Photoelectric Sensor

G30 Retroreflective Omron Photo Electric Photoelectric Sensor Switch

1. G: Photoelectric sensor
2. Sub code No.(18, 50, 76.....)
3. Operating voltage(2: 90-250VAC ;3: 10-30VDC; 4: 12-240VDC/24-240VAC; 5: Special voltage)
4. Detection method( A: Diffuse type; B: Mirror reflex type; C: Through beam type)
5. Detection distance (05: 5cm ; 10: 10cm; 30: 30cm; 101: 10m)
6. Output method(N: NPN transistor output; P: PNP transistor output; J: Relay output; L: AC two-line output; S: NPN+PNP)
7. Output status(A: NO; B: NC; C: NO+NC)
8. Auxi function code(T1: Front delay; T2: Rear delay; Y: Oil proof; T: With connector; I: Special requirement)

 

Technical Parameters:
 

Model NO.Detection distanceWorking voltageOutputDetection way
FormState
G30 -3A 70NA20 -100cmDC10-30VNPNNODiffuse type
G30 -3A 70NB20 -100cmDC10-30VNPNNCDiffuse type
G30 -3A 70NC20 -100cmDC10-30VNPNNO+NCDiffuse type
G30 -3A 70PA20 -100cmDC10-30VPNPNODiffuse type
G30 -3A 70PB20 -100cmDC10-30VPNPNODiffuse type
G30 -3A 70PC20 -100cmDC10-30VPNPNO+NCDiffuse type
G30 -2A 70LA20 -100cmAC90-250VSCR Control lable siliconNODiffuse type
G30 -2A 70LB20 -100cmAC90-250VSCR Control lable siliconNCDiffuse type
G30-3B3NA3 -5cmDC10-30VNPNNORetroreflective
G30-3B3NB3 -5cmDC10-30VNPNNCRetroreflective
G30-3B3NC3 -5cmDC10-30VNPNNO+NCRetroreflective
G30-3B3PA3 -5cmDC10-30VPNPNORetroreflective
G30-3B3PB3 -5cmDC10-30VPNPNCRetroreflective
G30-3B3PC3 -5cmDC10-30VPNPNO+NCRetroreflective
G30-2B3LA3 -5cmAC90-250VSCR Control lable siliconNORetroreflective
G30-2B 3LB3 -5cmAC90-250VSCR Control lable siliconNCRetroreflective
G30 -3C 102NA10mDC10-30VNPNNOThrough beam
G30 -3C 101NB10mDC10-30VNPNNCThrough beam
G30 -3C 101NC10mDC10-30VNPNNO+NCThrough beam
G30 -3C 101PA10mDC10-30VPNPNOThrough beam
G30 -3C 101PB10mDC10-30VPNPNCThrough beam
G30 -3C 101PC10mDC10-30VPNPNO+NCThrough beam
G30 -2C 101LA10mAC90-250VSCR Control lable siliconNOThrough beam

 

 

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